Title :
An HBT noise model valid up to transit frequency
Author :
Rudolph, M. ; Doerner, R. ; Klapproth, L. ; Heymann, P.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
A comprehensive HBT noise model for circuit simulation is presented that describes the microwave noise behavior up to the transit frequency. It is based on diode noise theory, and requires only the small-signal equivalent circuit, including the thermal resistance, and the dc bias point. A main feature is correlation of the shot-noise sources at the pn junctions. The model is verified by measurements of the four noise parameters of an InGaP/GaAs HBT, varying frequency and bias conditions.
Keywords :
III-V semiconductors; circuit simulation; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; shot noise; thermal noise; HBT noise model; InGaP-GaAs; InGaP/GaAs HBT; bias conditions; circuit simulation; dc bias point; diode noise theory; frequency dependence; microwave noise behavior; pn junctions; shot-noise sources; small-signal equivalent circuit; thermal resistance; transit frequency; Circuit noise; Circuit simulation; Diodes; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Noise measurement; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
