Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors

Author

Huang, Kuo-Ching ; Fang, Yean-Kuen ; Yaung, Dun-Nian ; Chen, Chii-Wen ; Liang, Mong-Song ; Hsieh, Jang-Cheng ; Su, Chi-Wen ; Lee, Kuei-Ying

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

20

Issue

1

fYear

1999

Firstpage

36

Lastpage

38

Abstract

The effects of different tungsten polycide technologies on the effective channel length and electrical performance of scaled CMOS transistors fabricated by rapid thermal annealing (RTA) have been investigated. Contrary to previous studies, it is found that the sputtered WSi/sub x/ device produces a larger reduction in channel length, a result which is confirmed by gate-to-drain overlap capacitance C/sub GD/ measurement. Experiments also indicate that the sputtered WSi/sub x/ devices possess a lower driving ability, and have higher off state leakage not only for the short channel but also for the long channel range.

Keywords

CMOS integrated circuits; MOSFET; capacitance; chemical vapour deposition; integrated circuit interconnections; leakage currents; rapid thermal annealing; semiconductor device measurement; semiconductor device metallisation; sputter deposition; tungsten compounds; 0.45 mum; RTA; WSi-SiO/sub 2/-Si; deep submicron CMOS transistors; driving ability; effective channel length; electrical performance; gate-to-drain overlap capacitance; long channel; off state leakage; scaled CMOS transistors; short channel; sputtered WSi/sub x/ device; tungsten polycide process; Boron; CMOS process; CMOS technology; Capacitance measurement; Chemical technology; Chemical vapor deposition; Electric variables; MOSFET circuits; Rapid thermal annealing; Tungsten;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.737566

Filename

737566