Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC´s

Author

Tseng, Ying-Che ; Huang, W. Margaret ; Spears, Edward ; Spooner, Daniel ; Ngo, David ; Ford, Jenny M. ; Woo, Jason C S

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

20

Issue

1

fYear

1999

Firstpage

54

Lastpage

56

Abstract

Phase noise in silicon-on-insulator (SOI) MOSFET feedback oscillators for RF IC applications is investigated. The observed correlation between the oscillator´s high frequency phase noise and the transistor´s low-frequency noise characteristics demonstrates that the phase noise overshoot still exists in partially-depleted (PD) floating body SOI nMOS Colpitts oscillators. These results suggest that kink-induced effects associated with low-frequency components of the signal are upconverted into the ideally kink-free high frequency domain operation mode of PD floating body SOI oscillators.

Keywords

MOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; feedback oscillators; integrated circuit noise; phase noise; silicon-on-insulator; voltage-controlled oscillators; 900 MHz to 2.4 GHz; LF noise; MOSFET feedback oscillator; RF IC; Si; kink-induced effects; low-frequency noise; nMOS Colpitts oscillators; partially-depleted floating body SOI; phase noise characteristics; phase noise overshoot; submicron SOI MOSFET; Application specific integrated circuits; Feedback; Integrated circuit noise; Low-frequency noise; MOSFET circuits; Oscillators; Phase noise; Radio frequency; Radiofrequency integrated circuits; Silicon on insulator technology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.737572

Filename

737572