Title :
Enhancement mode Al0.25Ga0.75As/In0.2 Ga0.8As nanowire HEMTs
Author :
Sohn, Y.J. ; Lee, B.H. ; Jeong, M.Y. ; Jeong, Y.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Pohang Univ. of Sci. & Technol., South Korea
fDate :
3/1/2001 12:00:00 AM
Abstract :
Enhancement mode Al0.25Ga0.75As/In0.2 Ga0.8As nanowire high electron mobility transistors (NW-HEMTs) are fabricated successfully by using selective wet etching and the depletion characteristic of a Schottky wrap gate (WPG). The devices exhibit very good modulation and saturation characteristics. For an NWHEMT with an estimated channel width of 250 nm, the maximum transconductance is ~450 mS/mm at a drain voltage of 1.5 V
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; high electron mobility transistors; indium compounds; low-power electronics; semiconductor quantum wires; 1.5 V; Al0.25Ga0.75As-In0.2Ga0.8As; Schottky wrap gate; depletion characteristics; enhancement mode nanowire HEMT; modulation characteristics; saturation characteristics; selective wet etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010208
