Title :
A new analytical IGBT model with improved electrical characteristics
Author :
Sheng, Kuang ; Finney, Stephen J. ; Williams, Barry W.
Author_Institution :
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
fDate :
1/1/1999 12:00:00 AM
Abstract :
A new analytical insulated gate bipolar transistor (IGBT) model for improved on-state characteristics prediction is proposed. Two-dimensional (2-D) effects in the forward conduction of an IGBT are studied analytically. These effects significantly in8uence the on-state characteristics of the device and must be accounted for when IGBT modeling. Dynamic characteristics and temperature effects are included in the model. Both three-dimensional (3-D) numerical simulation and experimental results support the theoretical analysis
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; 2-D forward conduction effects; analytical IGBT model; dynamic characteristics; electrical characteristics improvement; insulated gate bipolar transistor; on-state characteristics prediction; temperature effects; Analytical models; Anodes; Buffer layers; Capacitance; Charge carrier processes; Electric variables; Insulated gate bipolar transistors; MOSFET circuits; Temperature; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
