A new analytical IGBT model with improved electrical characteristics

Author

Sheng, Kuang ; Finney, Stephen J. ; Williams, Barry W.

Author_Institution

Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK

Volume

14

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

98

Lastpage

107

Abstract

A new analytical insulated gate bipolar transistor (IGBT) model for improved on-state characteristics prediction is proposed. Two-dimensional (2-D) effects in the forward conduction of an IGBT are studied analytically. These effects significantly in8uence the on-state characteristics of the device and must be accounted for when IGBT modeling. Dynamic characteristics and temperature effects are included in the model. Both three-dimensional (3-D) numerical simulation and experimental results support the theoretical analysis

Keywords

insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; 2-D forward conduction effects; analytical IGBT model; dynamic characteristics; electrical characteristics improvement; insulated gate bipolar transistor; on-state characteristics prediction; temperature effects; Analytical models; Anodes; Buffer layers; Capacitance; Charge carrier processes; Electric variables; Insulated gate bipolar transistors; MOSFET circuits; Temperature; Voltage;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.737597

Filename

737597