Title :
Bandgap voltage reference and temperature sensor in novel SOI technology
Author :
Glab, Sebastian ; Baszczyk, Mateusz ; Dorosz, Piotr ; Idzik, Marek ; Kucewicz, Wojciech ; Sapor, Maria ; Arai, Yutaro ; Miyoshi, Takanori ; Kapusta, Piotr ; Takeda, Akiko
Author_Institution :
AGH Univ. of Sci. & Technol., Krakow, Poland
Abstract :
A bandgap voltage reference together with absolute temperature sensor (PTAT) designed in 200 nm SOI technology is presented in this paper. Three slightly different versions were designed to verify the diode models available in the SOI process. For more extensive SOI process study the chip was fabricated on three different substrates. The bandgap reference circuit generates Vref = 1.27 V with 10 mV chip to chip spread. The best bandgap version has temperature coefficient -35 μV/K. Circuit design, simulations and comparison with measured performance are presented.
Keywords :
circuit simulation; diodes; energy gap; network synthesis; reference circuits; silicon-on-insulator; temperature measurement; temperature sensors; PTAT; SOI technology; bandgap voltage reference circuit; chip to chip fabrication; circuit design; circuit simulation; diode model; proportional to absolute temperature; temperature coefficient; temperature sensor; voltage 1.27 V; voltage 10 mV; Integrated circuit modeling; Photonic band gap; Semiconductor diodes; Substrates; Temperature dependence; Temperature measurement; Temperature sensors; Band gap; PTAT; Temperature sensor;
Conference_Titel :
Signals and Electronic Systems (ICSES), 2014 International Conference on
Conference_Location :
Poznan
DOI :
10.1109/ICSES.2014.6948708
