Enhanced Performance of LWIR LED Devices by Backside Thinning and Isolating the Pixels

Author

Das, Naresh C.

Author_Institution

Microphotonics Branch, Army Res. Lab., Adelphi, MD, USA

Volume

59

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

1209

Lastpage

1211

Abstract

We observed a threefold increase in light emission power for long-wave infrared (LWIR) light-emitting diode (LED) devices by backside thinning and isolating the individual pixel from others. The proposed technique of backside thinning and isolating bottom emitting LED devices resulted in high yield of devices in an array. The voltage drop of the etched device is lower compared with the unetched device. This newly developed technique of device isolation opens the path to further device performance improvement by using grating and lenslet deposition on an individual LED pixel.

Keywords

arrays; diffraction gratings; electric potential; etching; light emitting diodes; LWIR LED device; backside thinning; bottom emitting LED devices isolation; etched device; grating deposition; individual LED pixel; lenslet deposition; light emission power; long-wave infrared light-emitting diode devices; pixel isolation; voltage drop; Arrays; Light emitting diodes; Metals; Optical saturation; Performance evaluation; Power generation; Substrates; Infrared light-emitting diode (LED) device; LED efficiency; quantum cascade device; substrate thinning;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2185700

Filename

6159074