Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations

Author

Zhu, Zeqin ; Gildenblat, Gennady ; McAndrew, Colin C. ; Lim, Ik-sung

Author_Institution

Freescale Semicond. Inc., Tempe, AZ, USA

Volume

59

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1236

Lastpage

1244

Abstract

A new relaxation-time-approximation-based nonquasi-static (NQS) MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models. The new model is valid for all regions of operation and is compatible with, and at low frequencies recovers, the quasi-static description of the MOSFET. The model is implemented in two widely used circuit simulators and is tested for speed and convergence. It is verified by comparison with technology computer-aided design simulations and experimental data and by application of a recently developed benchmark test for NQS MOSFET models.

Keywords

MOSFET; approximation theory; semiconductor device models; RF-signal simulations; RTA-based NQS MOSFET model; circuit simulators; computer-aided design simulations; mixed-signal simulations; relaxation-time-approximation-based nonquasi-static MOSFET model; small-signal simulations; Computational modeling; Data models; Frequency measurement; Integrated circuit modeling; Logic gates; MOSFET circuits; Mathematical model; Bulk charge; RF; compact model; inversion charge; mixed-signal; nonquasi-static (NQS); relaxation time approximation (RTA); small-signal; surface potential; transient;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2186636

Filename

6159075