Title :
Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations
Author :
Zhu, Zeqin ; Gildenblat, Gennady ; McAndrew, Colin C. ; Lim, Ik-sung
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ, USA
fDate :
5/1/2012 12:00:00 AM
Abstract :
A new relaxation-time-approximation-based nonquasi-static (NQS) MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models. The new model is valid for all regions of operation and is compatible with, and at low frequencies recovers, the quasi-static description of the MOSFET. The model is implemented in two widely used circuit simulators and is tested for speed and convergence. It is verified by comparison with technology computer-aided design simulations and experimental data and by application of a recently developed benchmark test for NQS MOSFET models.
Keywords :
MOSFET; approximation theory; semiconductor device models; RF-signal simulations; RTA-based NQS MOSFET model; circuit simulators; computer-aided design simulations; mixed-signal simulations; relaxation-time-approximation-based nonquasi-static MOSFET model; small-signal simulations; Computational modeling; Data models; Frequency measurement; Integrated circuit modeling; Logic gates; MOSFET circuits; Mathematical model; Bulk charge; RF; compact model; inversion charge; mixed-signal; nonquasi-static (NQS); relaxation time approximation (RTA); small-signal; surface potential; transient;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2186636
