Large-Signal Analysis of a Transistor Laser

Author

Shirao, Mizuki ; Lee, SeungHun ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

Volume

47

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

359

Lastpage

367

Abstract

Small- and large-signal analyses of transistor lasers (TLs) are demonstrated for 0.98-μm wavelength GaInAs/GaAs and 1.3-μm AlGaInAs/InP systems. The modulation bandwidth of the TL was larger than that of a laser diode due to the lower damping effect in the former. Comparisons between TLs with different numbers of quantum wells indicated that a large signal response and high modulation bandwidth could be realized simultaneously. However, in the case of large-signal analysis, the calculated eye diagrams were degraded by a resonance oscillation peak. By changing structural parameters such as the facet reflectivity and by controlling the damping effect, the resonance frequency peak was suppressed and clear eye diagrams of >;40 Gb/s were obtained.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; semiconductor lasers; semiconductor quantum wells; AlGaInAs-InP; GaInAs-GaAs; damping effect; large-signal analysis; laser diode; quantum wells; resonance oscillation; transistor laser; wavelength 0.98 mum; wavelength 1.3 mum; Bandwidth; Charge carrier density; Equations; Gallium arsenide; Mathematical model; Modulation; Oscillators; 13 $mu{rm m}$; AlGaInAs; InP; large-signal analysis; laser diode; laser transistor;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2090341

Filename

5720477