DocumentCode :
1459934
Title :
Continuous-time feedback in floating-gate MOS circuits
Author :
Hasler, Paul
Author_Institution :
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
48
Issue :
1
fYear :
2001
fDate :
1/1/2001 12:00:00 AM
Firstpage :
56
Lastpage :
64
Abstract :
We present the negative- and positive-feedback circuit configurations of continuous-time floating-gate MOS circuits. We start by reviewing the dynamics of our pFET and nFET single-transistor synapses. We present the range of possible stabilizing and destabilizing types of feedback in circuits with one floating-gate synapse, including data from nFET and pFET synapses. We then show examples of competitive and cooperative behavior in multiple-synapse circuits. We present experimental data from circuits fabricated in the 2-μm n-well CMOS process available through MOSIS. We see similar experimental effects in 1.2and 0.5-μm processes
Keywords :
CMOS analogue integrated circuits; analogue processing circuits; circuit feedback; continuous time systems; hot carriers; neural chips; 0.5 micron; 1.2 micron; 2 micron; MOSIS; continuous-time feedback; floating-gate MOS circuits; multiple-synapse circuits; n-well CMOS process; nFET synapses; negative-feedback circuit configurations; pFET synapses; positive-feedback circuit configurations; single-transistor synapses; CMOS process; Coupling circuits; Dynamic programming; Feedback circuits; Nonvolatile memory; Secondary generated hot electron injection; Semiconductor device modeling; Silicon; Tunneling; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7130
Type :
jour
DOI :
10.1109/82.913187
Filename :
913187
Link To Document :
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