Title :
Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs
Author :
Pondigo De Los, A. Erika ; Gutierrez-D, E.A. ; Molina-R, J. ; Guarin, Fernando
Author_Institution :
Dept. of Electron., Inst. Nac. de Astrofis., Opt. y Electron., Puebla, Mexico
Abstract :
Through the measurement of the magneto-conductance properties of the reverse-biased Drain-Bulk (DB) junction of a MOSFET, we found the conductance of the active channel region, nearby the DB junction, is not space homogeneous, but it shows better conductance properties towards the edges than in the middle of the channel. Such a non-homogeneous channel conductance is attributed to the asymmetrical distribution of the mechanical strain used to enhance the carrier mobility.
Keywords :
MOSFET; carrier mobility; deformation; internal stresses; tunnelling magnetoresistance; DB junction; MOSFET; carrier mobility; magnetoconductance properties; magnetotunneling conductance; nonhomogeneous channel conductance; nonhomogeneous space mechanical strain; reverse-biased drain-bulk junction; Junctions; Magnetic field measurement; Magnetic tunneling; Magnetomechanical effects; Strain; Stress; Magnetic Field; Quantum Tunneling; Strain;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948765
