Title :
Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications
Author :
Litty, Antoine ; Ortolland, Sylvie ; Golanski, Dominique ; Cristoloveanu, S.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
A promising high-voltage MOSFET (HVMOS) in Ultra-Thin Body and Buried oxide Fully Depleted SOI technology (UTBB-FDSOI) is experimentally demonstrated. The Dual Ground Plane Extended-Drain MOSFET (DGP EDMOS) architecture uses the back-gate biasing as an efficient lever to optimize high-voltage performances. We show that the separated biasing of the two ground planes enables independent control of the channel and drift regions. Electrical characteristics such as specific on-resistance/breakdown trade-off as a function of the back-gate voltage and geometry are explored. We present and discuss encouraging results for 5V switched mode applications for energy management.
Keywords :
MOSFET; elemental semiconductors; energy management systems; power integrated circuits; silicon-on-insulator; DGP EDMOS architecture; HVMOS; UTBB-FDSOI technology; back-gate biasing; channel regions; drift regions; dual ground plane EDMOS architecture; dual ground plane extended-drain MOSFET architecture; energy management applications; high-voltage MOSFET; switched mode applications; ultrathin body and buried oxide fully depleted SOI technology; voltage 5 V; CMOS integrated circuits; Electric fields; Layout; Logic gates; MOSFET; Resistance; Silicon-on-insulator; EDMOS; FDSOI; MOSFET; back bias; extended-drain; high-voltage;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948776
