DocumentCode
1460328
Title
Influence of die attachment on MOS transistor matching
Author
Bastos, Jose ; Steyaert, Michel S J ; Pergoot, Anelia ; Sansen, Willy M.
Author_Institution
Katholieke Univ., Leuven, Heverlee, Belgium
Volume
10
Issue
2
fYear
1997
fDate
5/1/1997 12:00:00 AM
Firstpage
209
Lastpage
218
Abstract
A test chip which allows the experimental study of the influence of die residual stresses on MOS transistor matching, in a standard 0.7 μm CMOS technology, is described. The influence of eutectic die bonding on transistor matching is found to be a major degradation factor. Polyimide bonded dies do not significantly affect the matching performance of MOS transistors
Keywords
CMOS integrated circuits; integrated circuit technology; internal stresses; microassembling; 0.7 micron; CMOS technology; MOS transistor matching; degradation factor; die attachment; eutectic bonding; polyimide bonding; residual stress; test chip; CMOS technology; Circuit testing; MOSFETs; Microassembly; Polyimides; Residual stresses; Semiconductor device measurement; Semiconductor device packaging; Threshold voltage; Wafer bonding;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.572070
Filename
572070
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