Three-dimensional masterslice MMIC on Si substrate

Author

Toyoda, Ichihiko ; Nishikawa, Kenjiro ; Tokumitsu, T. ; Kamogawa, Kenji ; Yamaguchi, Chikara ; Hirano, Makoto ; Aikawa, Masayoshi

Author_Institution

NTT Wireless Syst. Labs., Kanagawa, Japan

Volume

45

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2524

Lastpage

2530

Abstract

This paper describes Si-based three-dimensional (3-D) monolithic microwave integrated circuit (MMIC) technology. This technology greatly improves the operating frequency of Si MMIC´s up to the Ku band and makes them competitive with GaAs MMIC´s in the higher frequency band. The characteristics of the coplanar waveguide formed on a lossy Si substrate and the TFMS line which is a basic element of the 3-D MMIC are numerically compared and discussed. An X-band amplifier, mixer, and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. The cost reduction effect of the technology is also discussed. In our estimation, cost reduction of about 95% from conventional GaAs 2-D MMIC´s can be achieved

Keywords

MMIC amplifiers; MMIC mixers; bipolar MMIC; coplanar waveguides; elemental semiconductors; finite element analysis; microstrip circuits; silicon; Ku band; Si; TFMS line; X-band; bipolar transistors; coplanar waveguide; cost reduction; lossy substrate; operating frequency; thin-film microstrip; three-dimensional masterslice MMIC; Bipolar transistors; Coplanar waveguides; Costs; Frequency; Gallium arsenide; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.643869

Filename

643869