High performance high reliability AlN/GaN DHFET

Author

Medjdoub, F. ; Okada, Etienne ; Grimbert, Bertrand ; Ducatteau, Damien ; Silvestri, Riccardo ; Meneghini, Matteo ; Zanoni, Enrico ; Meneghesso, Gaudenzio

Author_Institution

Inst. of Electron., Microelectron. & Nanotechnol., Villeneuve-d´Ascq, France

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

146

Lastpage

149

Abstract

We report on AlN/GaN double heterostructures for high frequency applications. 600 hours preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stability for the first time. A 150 nm AlN/GaN double heterostructure has been developed and evaluated on SiC substrate. State-of-the-art CW power-added-efficiencies (PAE) at 10 and 18 GHz have been achieved on ultrathin barrier (6 nm) GaN devices while operating at a drain bias exceeding 30 V.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device reliability; wide band gap semiconductors; AlN-GaN; CW power-added-efficiency; RF devices; Si; SiC; device stability; double heterostructures; drain bias; frequency 10 GHz; frequency 18 GHz; high performance high reliability DHFET; millimeter-wave device stability; reliability assessment; size 100 nm; size 150 nm; size 6 nm; time 600 hour; ultrathin barrier devices; Gallium nitride; III-V semiconductor materials; Logic gates; Silicon; Silicon carbide; Stress; Substrates; AlN/GaN DHFET; RF power; load-pull; power-added-efficiency (PAE); reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948779

Filename

6948779