DocumentCode :
146048
Title :
IR-optimized silicon demodulating detector with 3-dimensional electrodes
Author :
Pancheri, Lucio ; Savazzi, Filippo ; Dalla Betta, Gian-Franco ; Stoppa, David ; Boscardin, Maurizio
Author_Institution :
Dept. of Ind. Eng. (DII), Univ. of Trento, Trento, Italy
fYear :
2014
fDate :
22-26 Sept. 2014
Firstpage :
170
Lastpage :
173
Abstract :
A novel electro-optical demodulating detector with 3-dimensional electrodes is presented in this paper. Thanks to a large substrate thickness, this device can combine high responsivity and demodulation contrast in the infrared spectral region, as needed in Time-of-Flight optical ranging applications. Proof-of-concept large-area detectors are fabricated on Floating Zone silicon, using Deep Reactive Ion Etching to form through-silicon columnar electrodes. The device operation principle is validated by experimental and simulation results. TCAD modeling is used to design detectors with scaled geometry suitable for integration in hybrid image sensors.
Keywords :
electro-optical modulation; elemental semiconductors; image sensors; infrared detectors; infrared spectra; silicon; sputter etching; 3-dimensional electrodes; IR-optimized silicon demodulating detector; Si; TCAD modeling; deep reactive ion etching; demodulation contrast; electro-optical demodulating detector; floating zone silicon; hybrid image sensors; infrared spectral region; scaled geometry; substrate thickness; through-silicon columnar electrodes; time-of-flight optical ranging applications; Current measurement; Demodulation; Detectors; Electrodes; Image sensors; Optical device fabrication; Silicon; Distance measurement; Photodetector; Silicon; Time-of-Flight;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
ISSN :
1930-8876
Print_ISBN :
978-1-4799-4378-4
Type :
conf
DOI :
10.1109/ESSDERC.2014.6948787
Filename :
6948787
Link To Document :
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