DocumentCode
146048
Title
IR-optimized silicon demodulating detector with 3-dimensional electrodes
Author
Pancheri, Lucio ; Savazzi, Filippo ; Dalla Betta, Gian-Franco ; Stoppa, David ; Boscardin, Maurizio
Author_Institution
Dept. of Ind. Eng. (DII), Univ. of Trento, Trento, Italy
fYear
2014
fDate
22-26 Sept. 2014
Firstpage
170
Lastpage
173
Abstract
A novel electro-optical demodulating detector with 3-dimensional electrodes is presented in this paper. Thanks to a large substrate thickness, this device can combine high responsivity and demodulation contrast in the infrared spectral region, as needed in Time-of-Flight optical ranging applications. Proof-of-concept large-area detectors are fabricated on Floating Zone silicon, using Deep Reactive Ion Etching to form through-silicon columnar electrodes. The device operation principle is validated by experimental and simulation results. TCAD modeling is used to design detectors with scaled geometry suitable for integration in hybrid image sensors.
Keywords
electro-optical modulation; elemental semiconductors; image sensors; infrared detectors; infrared spectra; silicon; sputter etching; 3-dimensional electrodes; IR-optimized silicon demodulating detector; Si; TCAD modeling; deep reactive ion etching; demodulation contrast; electro-optical demodulating detector; floating zone silicon; hybrid image sensors; infrared spectral region; scaled geometry; substrate thickness; through-silicon columnar electrodes; time-of-flight optical ranging applications; Current measurement; Demodulation; Detectors; Electrodes; Image sensors; Optical device fabrication; Silicon; Distance measurement; Photodetector; Silicon; Time-of-Flight;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location
Venice
ISSN
1930-8876
Print_ISBN
978-1-4799-4378-4
Type
conf
DOI
10.1109/ESSDERC.2014.6948787
Filename
6948787
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