Title :
Experimental demonstration of improved analog device performance in GAA-NW-TFETs
Author :
Schulte-Braucks, Christian ; Richter, Simon ; Knoll, Lars ; Selmi, Luca ; Qing-Tai Zhao ; Mantl, Siegfried
Author_Institution :
JARA-FIT, Forschungszentrum Julich, Julich, Germany
Abstract :
We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10 nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V-1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μ A/μm at a gate overdrive of Vgt = Vd = -1 V were achieved for the GAA-NW-TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20 nm FinFETs.
Keywords :
analogue circuits; field effect transistors; nanowires; tunnel transistors; FinFET; GAA-NW-TFET; electrostatic enhancement; experimental data demonstration; gate all around nanowire; gate overdrive; improved analog device performance; intrinsic gain; maximum transconductance efficiency; output current-saturation; p-type planar; size 10 nm; size 20 nm; tunnel-FET; voltage -1 V; Junctions; Logic gates; MOSFET; Performance evaluation; Resistance; Transconductance;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948789
