Title :
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance
Author :
Morita, Yusuke ; Mori, Takayoshi ; Migita, S. ; Mizubayashi, W. ; Fukuda, Kenji ; Matsukawa, T. ; Endo, Kazuhiro ; O´uchi, S. ; Liu, Y.X. ; Masahara, M. ; Ota, Hiroyuki
Author_Institution :
Green Nanoelectron. Center, Nanoelectron. Res. Inst., Tsukuba, Japan
Abstract :
We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improves the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improve step-by-step with interface quality.
Keywords :
elemental semiconductors; field effect transistors; semiconductor doping; silicon; surface cleaning; tunnel transistors; Si:Ar; Si:B; arsenic-doped Si surfaces; boron-doped Si surfaces; epitaxial channel growth; epitaxial channel quality; interface quality; n-TFET; p-TFET; sequential surface cleaning; subthreshold swing; tunnel FET performance; tunnel junction quality; CMOS integrated circuits; Epitaxial growth; Logic gates; Silicon; Surface cleaning; TFET; epitaxial growth; subthreshold slope;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948790
