Title :
High-frequency low-power ICs in a scaled submicrometer HBT technology
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
Fast, dense, and low-power integrated circuits (ICs) have been developed using a new scaled heterojunction bipolar transistor (HBT) IC process. HBTs have been fabricated with emitter dimensions of 0.3 μm 2 and a circuit metallization pitch of 4 μm to reduce power and compact the chip size. Submicrometer HBTs exhibited fT of over 160 GHz. A number of circuits using this new technology have been demonstrated, including a low-power comparator test chip clocked at 40 GHz and an ultra-low-power phase-locked-loop-based (PLL) clock and data-recovery circuit consuming 22-mW dc power at 4 GHz
Keywords :
VLSI; bipolar MMIC; clocks; comparators (circuits); heterojunction bipolar transistors; integrated circuit metallisation; phase locked oscillators; voltage-controlled oscillators; 22 mW; 4 GHz; 4 micron; 40 GHz; circuit metallization pitch; data-recovery circuit; emitter dimensions; low-power comparator test chip; low-power integrated circuits; scaled submicrometer HBT technology; ultra-low-power phase-locked-loop-based clock; Bipolar integrated circuits; Circuit testing; Clocks; Energy consumption; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Metallization; Phase locked loops;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
