Title :
Variability of UTBB MOSFET analog figures of merit in wide frequency range
Author :
Makovejev, S. ; Esfeh, B. Kazemi ; Raskin, Jean-Pierre ; Kilchytska, V. ; Flandre, Denis ; Barral, V. ; Planes, N. ; Haond, M.
Author_Institution :
ICTEAM Inst., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
Inter-die variability of analog figures of merit of ultra-thin body and buried oxide (UTBB) FDSOI MOSFETs was studied in a wide frequency range. We demonstrate that variability in the entire frequency range is small and does not exceed 5%, which is considerably less than in previously published results on SOI FinFETs. An effect of frequency on the analog figures of merit variability is discussed and preliminary explanation is proposed.
Keywords :
MOSFET; silicon-on-insulator; FDSOI MOSFET; UTBB MOSFET analog figures of merit; ultrathin body and buried oxide; wide frequency range; FinFETs; Frequency dependence; Logic gates; Silicon; Standards; Substrates; FDSOI; UTBB; analog figures of merit; intrinsic gain; output conductance; self-heating;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948800
