Title :
Physical Science, Measurement and Instrumentation, Management and Education, IEE Proceedings A
Author_Institution :
Res. Inst. of Electr. Ind., Cservenka, Budapest, Hungary
fDate :
11/1/1990 12:00:00 AM
Abstract :
The behaviour of fuses and power semiconductors at transient overload can be well characterised by the I2t rating. The author gives an approximate and easy-to-use method for calculating I2t rating. To apply this method, only the broken-line envelope of the amplitude density function has to be known.
Keywords :
electric fuses; overcurrent protection; power electronics; rectifying circuits; transients; I2t rating; amplitude density function; broken-line envelope; energy; fuses; power electronics; power semiconductors; rectifier; transient overload;
Journal_Title :
Physical Science, Measurement and Instrumentation, Management and Education, IEE Proceedings A
