Title :
Set/reset statistics and kinetics in phase change memory arrays
Author :
Rizzi, Maurizio ; Ciocchini, Nicola ; Ielmini, Daniele ; Ghetti, Andrea ; Fantini, P.
Author_Institution :
DEIB Dept., Politec. di Milano, Milan, Italy
Abstract :
The development of next-generation PCM arrays requires a better understanding of set/reset processes at statistical level. This work presents experimental programming characteristics on 45 nm arrays and analyzes the statistical distribution of set/reset program and read currents. Results show (i) a reset-voltage dependence for both the melt current and the crystallization kinetics and (ii) a reduced crystallization spread in the high-temperature (set) regime, compared to the low-temperature (retention) one.
Keywords :
crystallisation; phase change memories; statistical distributions; PCM arrays; crystallization kinetics; experimental programming characteristics; melt current; phase change memory arrays; reduced crystallization spread; reset program; reset statistics; reset-voltage dependence; size 45 nm; statistical distribution; Crystallization; Kinetic theory; Numerical models; Phase change materials; Phase change memory; Programming; Resistance;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948803
