Title :
Parameters extraction on HfOX based RRAM
Author :
Peng Huang ; Bing Chen ; Haitong Li ; Zhe Chen ; Bin Gao ; Xiaoyan Liu ; Jinfeng Kang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this work, a novel methodology including the extraction strategy and characterization procedure is developed to extract the physical parameters which dominate the switching characteristics of HfOX based RRAM devices. With the extracted parameters, the retention behaviors of HfOX based RRAM devices are simulated by the atom-level simulation tool and compared with the measurement. The agreement between the simulation and measurement verifies the validity of the developed methodology.
Keywords :
hafnium compounds; random-access storage; HfOX; RRAM devices; atom-level simulation tool; parameters extraction; physical parameters; retention behaviors; switching characteristics; Current measurement; Electron devices; Hafnium compounds; Resistance; Switches; Temperature measurement; Voltage measurement; RRAM; analytic model; parameters extraction; retention;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948807
