The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

Author

Monsieur, F. ; Denis, Y. ; Rideau, D. ; Quenette, V. ; Gouget, G. ; Tavernier, C. ; Jaouen, H. ; Ghibaudo, Gerard ; Lacord, J.

Author_Institution

STMicroelectron., Crolles, France

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

254

Lastpage

257

Abstract

This work focuses on what drives the access resistance. Based on TCAD simulations, we evidence that the access resistance does depend on gate voltage. From this statement, after considering an access resistance compact model, we show that the access resistance voltage dependence generates an artificial short channel mobility collapse. Based on actual silicon data we establish link between μo-L and Rac-Vg. In particular this relation predicts that negative resistance could be extracted for narrow devices in agreement with experiments.

Keywords

MOSFET; negative resistance; silicon-on-insulator; technology CAD (electronics); FDSOI technologies; TCAD simulations; access resistance compact model; access resistance voltage dependence; artificial short channel mobility collapse; gate voltage; narrow devices; negative resistance; size 28 nm; spacer region; Doping; Equations; Junctions; Logic gates; Resistance; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948808

Filename

6948808