• DocumentCode
    1460883
  • Title

    Tunable dual-mode filter using varactor and variable ring resonator on integrated BST/TiO2/Si substrate

  • Author

    Kim, K.B.

  • Author_Institution
    Samsung-Thales Inst. of Adv. Technol. (SIAT), Samsung Thales Co., Yongin, South Korea
  • Volume
    46
  • Issue
    7
  • fYear
    2010
  • Firstpage
    509
  • Lastpage
    511
  • Abstract
    A RF tunable dual-mode filter employing a BST (BaxSr1- xTiO3)-based ring resonator and a capacitor is proposed. BST thin film was deposited on TiO2/Si substrate and a TiO2 buffer layer grown by ALD (atomic layer deposition). The device with a BST varactor capacitance of 0.5 pF and 40 of tunability applied voltage of 40 V, and a tunable ring resonator frequency of 1.53 2.02 GHz with a bias of up to 40 V, has been realised. The fabricated bandpass filter has a centre frequency of 1.53 GHz and shows a tunability of approximately 20 with an applied voltage of 40 V. It also has a bandwidth of 74 MHz and shows a tunability of approximately 27 with an applied voltage of 40 V.
  • Keywords
    atomic layer deposition; band-pass filters; resonator filters; substrates; titanium compounds; varactors; ALD; BST varactor capacitance; RF tunable dual-mode filter; TiO2-Si; atomic layer deposition; bandwidth 74 MHz; buffer layer grown; capacitance 0.5 pF; fabricated bandpass filter; frequency 1.53 GHz to 2.02 GHz; integrated substrate; tunability applied voltage; variable ring resonator; voltage 40 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.0501
  • Filename
    5442121