DocumentCode
1460883
Title
Tunable dual-mode filter using varactor and variable ring resonator on integrated BST/TiO2/Si substrate
Author
Kim, K.B.
Author_Institution
Samsung-Thales Inst. of Adv. Technol. (SIAT), Samsung Thales Co., Yongin, South Korea
Volume
46
Issue
7
fYear
2010
Firstpage
509
Lastpage
511
Abstract
A RF tunable dual-mode filter employing a BST (BaxSr1- xTiO3)-based ring resonator and a capacitor is proposed. BST thin film was deposited on TiO2/Si substrate and a TiO2 buffer layer grown by ALD (atomic layer deposition). The device with a BST varactor capacitance of 0.5 pF and 40 of tunability applied voltage of 40 V, and a tunable ring resonator frequency of 1.53 2.02 GHz with a bias of up to 40 V, has been realised. The fabricated bandpass filter has a centre frequency of 1.53 GHz and shows a tunability of approximately 20 with an applied voltage of 40 V. It also has a bandwidth of 74 MHz and shows a tunability of approximately 27 with an applied voltage of 40 V.
Keywords
atomic layer deposition; band-pass filters; resonator filters; substrates; titanium compounds; varactors; ALD; BST varactor capacitance; RF tunable dual-mode filter; TiO2-Si; atomic layer deposition; bandwidth 74 MHz; buffer layer grown; capacitance 0.5 pF; fabricated bandpass filter; frequency 1.53 GHz to 2.02 GHz; integrated substrate; tunability applied voltage; variable ring resonator; voltage 40 V;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.0501
Filename
5442121
Link To Document