DocumentCode :
1460883
Title :
Tunable dual-mode filter using varactor and variable ring resonator on integrated BST/TiO2/Si substrate
Author :
Kim, K.B.
Author_Institution :
Samsung-Thales Inst. of Adv. Technol. (SIAT), Samsung Thales Co., Yongin, South Korea
Volume :
46
Issue :
7
fYear :
2010
Firstpage :
509
Lastpage :
511
Abstract :
A RF tunable dual-mode filter employing a BST (BaxSr1- xTiO3)-based ring resonator and a capacitor is proposed. BST thin film was deposited on TiO2/Si substrate and a TiO2 buffer layer grown by ALD (atomic layer deposition). The device with a BST varactor capacitance of 0.5 pF and 40 of tunability applied voltage of 40 V, and a tunable ring resonator frequency of 1.53 2.02 GHz with a bias of up to 40 V, has been realised. The fabricated bandpass filter has a centre frequency of 1.53 GHz and shows a tunability of approximately 20 with an applied voltage of 40 V. It also has a bandwidth of 74 MHz and shows a tunability of approximately 27 with an applied voltage of 40 V.
Keywords :
atomic layer deposition; band-pass filters; resonator filters; substrates; titanium compounds; varactors; ALD; BST varactor capacitance; RF tunable dual-mode filter; TiO2-Si; atomic layer deposition; bandwidth 74 MHz; buffer layer grown; capacitance 0.5 pF; fabricated bandpass filter; frequency 1.53 GHz to 2.02 GHz; integrated substrate; tunability applied voltage; variable ring resonator; voltage 40 V;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.0501
Filename :
5442121
Link To Document :
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