A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs

Author

Villani, F. ; Gnani, Elena ; Gnudi, A. ; Reggiani, S. ; Baccarani, G.

Author_Institution

DEI, Univ. of Bologna, Bologna, Italy

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

262

Lastpage

265

Abstract

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs is developed and compared with full-quantum simulation data. It will be shown that the pure analytical solution perfectly matches the k-p data at high V_DS. However, a coupling with the numerical solution of the 1D Poisson equation in the transverse direction is necessary at low V_DS, in order to properly describe the charge density in equilibrium with the drain contact. With such an approach we are able to correctly predict the potential profile for both the linear and saturation regimes.

Keywords

MOSFET; Poisson equation; semiconductor device models; semiconductor heterojunctions; tunnel transistors; 1D Poisson equation; charge density; drain contact; heterojunction tunnel FET; homojunction tunnel FET; k-p data; linear regime; potential profile prediction; quasi-2D semianalytical model; saturation regime; Data models; Heterojunctions; Logic gates; Mathematical model; Numerical models; Poisson equations;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948810

Filename

6948810