Compact Fermi potential model for heterostructure HEMTs with rectangular quantum well

Compact models for high electron-mobility transistors (HEMTs) with triangular-potential-wells have been in development since the past few years. Double heterostructure HEMTs with rectangular-quantum-wells are also gaining importance due of their high mobility characteristics. Triangular-well model fails to capture the physics of double heterostructure devices. This paper presents a new physics based compact Fermi potential model for HEMTs with rectangular-well. It is validated with the coupled Poisson-Schrödinger based exact (numerical) solutions. The model is shown to accurately capture the Fermi-potential in the subthreshold, weak inversion, and strong inversion regions. The scalability of the model for device physical parameters is also presented. The proposed model can be used to simulate the I_d-V_d and I_d-V_g characteristics of double heterojunction HEMTs with rectangular-well.