Title :
Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires
Author :
Strangio, Sebastiano ; Palestri, Pierpaolo ; Esseni, David ; Selmi, Luca ; Crupi, Felice
Author_Institution :
DIEGM, Univ. of Udine, Udine, Italy
Abstract :
Tunnel-FETs are studied in a mixed device/circuit simulation environment. Model parameters calibrated on experimental DC as well as pulsed characterizations are then used for 6T SRAM cells investigation. Issues concerning fabricated devices, as the ambipolarity and the uni-directionality, are addressed at both device and circuit levels. Our results suggest that ambipolarity needs to be solved through device engineering and/or fabrication process improvements, while issues related to uni-directionality may be mitigated with a proper circuit design.
Keywords :
SRAM chips; elemental semiconductors; field effect transistors; nanowires; silicon; tunnel transistors; 6T SRAM cells; Si; TFET; mixed circuit simulation environment; mixed device simulation environment; silicon nanowires; tunnel-FET; Calibration; Integrated circuit modeling; Inverters; Logic gates; SRAM cells; Tunneling; Ambipolarity; SRAM; TCAD; Tunnel-FET;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948815
