Design of a resonant-cavity-enhanced photodetector for high-speed applications

Author

Tung, Hsin-Han ; Lee, Chien-Ping

Author_Institution

Dept. of Electr. Eng., Nat. Lien-Ho Junior Coll. of Technol. & Commerce, Miao Li, Taiwan

Volume

33

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

753

Lastpage

760

Abstract

We present a theoretical study of the effects of light field distribution on the frequency response of a resonant-cavity-enhanced p-i-n photodetector. Taking advantage of the flexibility of cavity design, one can tailor the light field distribution in the absorption region. Because of the difference in velocities of the carriers, the speed performances of the detector depend on the field distribution and the cavity design. The results of our work indicate that when the maximum of light field intensity happens near the p⁺ edge of the depletion layer, the device shows the best speed performance. The frequency response, the impulse response, and the step response have been calculated for different structures to demonstrate the importance of the field distribution

Keywords

Fabry-Perot resonators; III-V semiconductors; aluminium compounds; frequency response; gallium arsenide; high-speed optical techniques; p-i-n photodiodes; photodetectors; semiconductor quantum wells; step response; transient response; Fabry-Perot cavity; GaAs-AlAs; GaAs/AlAs quantum wells; cavity design flexibility; depletion layer p⁺ edge; frequency response; high-speed applications; impulse response; light field distribution; light field intensity maximum; quantum efficiency; resonant-cavity-enhanced p-i-n photodetector; speed performance; step response; Absorption; Bandwidth; Capacitance; Detectors; Frequency response; Mirrors; Optical feedback; PIN photodiodes; Photodetectors; Resonance;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.572149

Filename

572149