The properties of semi-conductor devices

Rectifiers and transistors developed in recent years make use of rectifying junctions in the body of the semi-conductor, formed by the introduction of appropriate impurities. Junctions may be produced during crystal growth or by alloying or solid state diffusion. The various methods are described for germanium and silicon rectifiers and transistors, and the properties of the resulting devices examined. Semi-conductor photocells are also described.