Title :
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation
Author :
Di Lecce, Valerio ; Grassi, Roberto ; Gnudi, A. ; Gnani, Elena ; Reggiani, S. ; Baccarani, G.
Author_Institution :
E. De Castro Adv. Res. Center on Electron. Syst. (ARCES), Univ. of Bologna, Bologna, Italy
Abstract :
The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.
Keywords :
Poisson equation; crystal orientation; elemental semiconductors; field effect transistors; graphene; impurity scattering; silicon; submillimetre wave transistors; terahertz wave devices; GBHTs; Poisson equation; Si-C; crystallographic orientation; impurity scattering effect; in-house developed simulator; quantum transport; silicon-based graphene-base heterojunction transistors; terahertz operation; Cutoff frequency; Graphene; Heterojunctions; Impurities; Scattering; Silicon; Tunneling;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948823
