DocumentCode :
146119
Title :
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime
Author :
Imperiale, I. ; Reggiani, S. ; Gnani, Elena ; Gnudi, A. ; Baccarani, G. ; Nguyen, L. ; Denison, M.
Author_Institution :
DEI, Univ. of Bologna, Bologna, Italy
fYear :
2014
fDate :
22-26 Sept. 2014
Firstpage :
325
Lastpage :
328
Abstract :
In high-voltage integrated circuits operating at high temperatures, charge transport phenomena can occur in the encapsulation layer as a consequence of the electric field spreading out from the high-voltage bondpads/bondwires. In this work, the most relevant features of epoxy resins commonly used in the high-voltage packaging industry have been modelled and implemented in a commercial TCAD tool. Although the study has been performed on a 2D simulation domain, it is shown that very good agreement with measurements can be obtained, provided that appropriate boundary conditions are taken into account. The TCAD investigation highlights the role played by metallization and wires during a high-voltage stress over a wide temperature range.
Keywords :
circuit simulation; encapsulation; integrated circuit modelling; integrated circuit packaging; resins; technology CAD (electronics); 2D simulation domain; TCAD modeling; boundary conditions; electric field; encapsulation layer; epoxy resins; high temperature charge transport phenomena; high-voltage bondpad-bondwires; high-voltage high-temperature operation regime; high-voltage integrated circuits; high-voltage packaging industry; high-voltage stress; metallization; Electric potential; Encapsulation; Leakage currents; Temperature measurement; Temperature sensors; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
ISSN :
1930-8876
Print_ISBN :
978-1-4799-4378-4
Type :
conf
DOI :
10.1109/ESSDERC.2014.6948826
Filename :
6948826
Link To Document :
بازگشت