DocumentCode :
146125
Title :
GaN virtual prototyping: From traps modeling to system-level cascode optimization
Author :
Curatola, G. ; Kassmanhuber, A. ; Yuferev, S. ; Franke, J. ; Pozzovivo, G. ; Lavanga, S. ; Prechtl, G. ; Detzel, T. ; Haeberlen, O.
Author_Institution :
Infineon Technol. Austria, Villach, Austria
fYear :
2014
fDate :
22-26 Sept. 2014
Firstpage :
337
Lastpage :
340
Abstract :
The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous optimization of technology, packaging and applications. We will also show that Virtual Prototyping (VP) becomes, in GaN technology, a fundamental tool that allows not only to have a fundamental understanding of the device properties but more importantly it allows to strongly link device optimization, technology and system-level performance. In the present paper we will describe our view on the system-level optimization of high voltage GaN technology and present detailed simulations and comparison with experiments for both normally on isolated GaN transistors and cascoded GaN devices in real switching applications.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; optimisation; semiconductor device packaging; virtual prototyping; wide band gap semiconductors; GaN; GaN technology; GaN virtual prototyping; cascoded GaN devices; device properties; high voltage applications; isolated GaN transistors; packaging; system-level cascode optimization; system-level optimization; traps modeling; Capacitance; Gallium nitride; HEMTs; MODFETs; MOSFET; Optimization; Performance evaluation; GaN; TCAD; Virtual Prototyping; bridgeless PFC; cascode; device optimization; normally-on; switch-mode power supply;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
ISSN :
1930-8876
Print_ISBN :
978-1-4799-4378-4
Type :
conf
DOI :
10.1109/ESSDERC.2014.6948829
Filename :
6948829
Link To Document :
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