DocumentCode
146125
Title
GaN virtual prototyping: From traps modeling to system-level cascode optimization
Author
Curatola, G. ; Kassmanhuber, A. ; Yuferev, S. ; Franke, J. ; Pozzovivo, G. ; Lavanga, S. ; Prechtl, G. ; Detzel, T. ; Haeberlen, O.
Author_Institution
Infineon Technol. Austria, Villach, Austria
fYear
2014
fDate
22-26 Sept. 2014
Firstpage
337
Lastpage
340
Abstract
The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous optimization of technology, packaging and applications. We will also show that Virtual Prototyping (VP) becomes, in GaN technology, a fundamental tool that allows not only to have a fundamental understanding of the device properties but more importantly it allows to strongly link device optimization, technology and system-level performance. In the present paper we will describe our view on the system-level optimization of high voltage GaN technology and present detailed simulations and comparison with experiments for both normally on isolated GaN transistors and cascoded GaN devices in real switching applications.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; optimisation; semiconductor device packaging; virtual prototyping; wide band gap semiconductors; GaN; GaN technology; GaN virtual prototyping; cascoded GaN devices; device properties; high voltage applications; isolated GaN transistors; packaging; system-level cascode optimization; system-level optimization; traps modeling; Capacitance; Gallium nitride; HEMTs; MODFETs; MOSFET; Optimization; Performance evaluation; GaN; TCAD; Virtual Prototyping; bridgeless PFC; cascode; device optimization; normally-on; switch-mode power supply;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location
Venice
ISSN
1930-8876
Print_ISBN
978-1-4799-4378-4
Type
conf
DOI
10.1109/ESSDERC.2014.6948829
Filename
6948829
Link To Document