Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability

Author

Xingsheng Wang ; Binjie Cheng ; Brown, A.R. ; Millar, C. ; Asenov, Asen

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

349

Lastpage

352

Abstract

In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-Optimization (DTCO). The proposed statistical simulation and compact modelling methodology is demonstrated via a comprehensive evaluation of the impact of FinFET variability on SRAM cell stability.

Keywords

MOSFET circuits; SRAM chips; circuit optimisation; circuit simulation; circuit stability; integrated circuit modelling; statistical analysis; technology CAD (electronics); DTCO; advanced atomistic TCAD tools; compact modelling methodology; design-technology co-optimization; long-range process variation; nanoscale FinFET-based SRAM cell stability; short-range statistical variability; statistical simulation; FinFETs; Logic gates; SRAM cells; Semiconductor device modeling; Stability analysis; FinFET; SRAM; process variation; stability; statistical variability; unified compact modelling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948832

Filename

6948832