Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors

Author

Fang, Hui ; Chuang, Steven ; Takei, Kuniharu ; Kim, Ha Sul ; Plis, Elena ; Liu, Chin-Hung ; Krishna, Sanjay ; Chueh, Yu-Lun ; Javey, Ali

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

504

Lastpage

506

Abstract

Ultrathin-body InAsSb-on-insulator n-type field-effect transistors (FETs) with ultrahigh electron mobilities are reported. The devices are obtained by the layer transfer of ultrathin InAs_0.7Sb_0.3 layers (thickness of 7-17 nm) onto Si/SiO₂ substrates. InAsSb-on-insulator FETs exhibit an effective mobility of ~ 3400 cm²/V·s for a body thickness of 7 nm, which represents ~ 2× enhancement over InAs devices of similar thickness. The top-gated FETs deliver an intrinsic transconductance of ~ 0.56 mS/μm (gate length of ~ 500 nm) at V_DS = 0.5 V with I_ON/I_OFF of 10²-10³. These results demonstrate the utility of the transfer process for obtaining high-mobility n-FETs on Si substrates by using mixed anion arsenide-antimonide as the active channel material.

Keywords

antimony compounds; arsenic compounds; electron mobility; field effect transistors; indium compounds; silicon; InAsSb; InAsSb-on-insulator FET; InAsSb-on-insulator field-effect transistors; Si substrates; VDS; active channel material; body thickness; high-mobility n-FET; intrinsic transconductance; layer transfer; mixed anion arsenide-antimonide; top-gated FET; transfer process; ultrahigh electron mobility; ultrathin-body InAsSb-on-insulator n-type field-effect transistors; ultrathin-body high-mobility; Educational institutions; FETs; Logic gates; Silicon; Substrates; Field-effect transistors (FETs); InAsSb; XOI; ultrathin body (UTB);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2185477

Filename

6163337