Monte Carlo modeling of the extraction of roughness parameters at nanometer scale by Critical Dimension Scanning Electron Microscopy

Author

Ciappa, M. ; Ilgunsatiroglu, E. ; Illarionov, A.Yu. ; Filosomi, F. ; Santini, C.

Author_Institution

Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

357

Lastpage

360

Abstract

Uncertainties in the sub-nanometer range, the use of new materials, roughness, and the three-dimensional structures represent main challenges for the metrology of critical dimensions in nanostructures. In this paper, Monte Carlo modeling is used to investigate the correlation of the “true line edge roughness” of photoresist lines with the roughness rendered by Critical Dimension Scanning Electron Microscopy. Examples are presented, where realistic full-three dimensional photoresist structures in the nanometer range are generated by TCAD process simulation.

Keywords

Monte Carlo methods; photoresists; scanning electron microscopy; semiconductor process modelling; surface roughness; technology CAD (electronics); Monte Carlo modeling; SEM; TCAD process simulation; critical dimension metrology; critical dimension scanning electron microscopy; full-3D photoresist structures; nanometer scale; photoresist lines; roughness parameter extraction; true line edge roughness; Correlation; Finite element analysis; Geometry; Scanning electron microscopy; Shape; Solid modeling; Critical Dimensions; Line Edge Roughness; Metrology; Monte Carlo Modeling; Scanning Electron Microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948834

Filename

6948834