2 x 2 optical waveguide switch with bow-tie electrode based on carrier-injection total internal reflection in SiGe alloy

Author

Baojun Li ; Soo-Jin Chua

Author_Institution

Singapore-MIT Alliance, Nat. Univ. of Singapore, Singapore

Volume

13

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

206

Lastpage

208

Abstract

Based on the total internal reflection and the plasma dispersion effect of SiGe alloy, a 2×2 intersectional rib optical waveguide switch with bow-tie electrode has been proposed and fabricated for the wavelength of 1.3-μm operation. The thickness of the SiGe layer is 2.6 μm and the width is 9 μm. The branch angle of the switch is 2/spl deg/ and the bow-tie angle is 1.5/spl deg/. The on-state crosstalk is -19.6 dB, the off-state extinction ratio is 38.5 dB and the off-state insertion loss is less than 1.70 dB. The switching time is about 180 ns.

Keywords

Ge-Si alloys; electrodes; light reflection; optical crosstalk; optical design techniques; optical fabrication; optical losses; optical planar waveguides; optical switches; optical testing; optical waveguide components; rib waveguides; 1.3 mum; 1.7 dB; 180 ns; 2.6 mum; 2/spl times/2 intersectional rib optical waveguide switch; 2/spl times/2 optical waveguide switch; 9 mum; SiGe; SiGe alloy; bow-tie angle; bow-tie electrode; branch angle; carrier-injection total internal reflection; fabrication; off-state extinction ratio; off-state insertion loss; on-state crosstalk; plasma dispersion effect; switching time; thickness; total internal reflection; width; Dispersion; Electrodes; Extinction ratio; Germanium silicon alloys; Optical crosstalk; Optical reflection; Optical switches; Optical waveguides; Plasma waves; Silicon germanium;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.914322

Filename

914322