DocumentCode :
146137
Title :
Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer
Author :
Olyaei, Maryam ; Malm, B. Gunnar ; Litta, Eugenio Dentoni ; Hellstrom, Per-Erik ; Ostling, Mikael
Author_Institution :
Sch. of Inf. & Commun. Technol., Integrated Devices &Circuits, KTH R. Inst. of Technol., Kista, Sweden
fYear :
2014
fDate :
22-26 Sept. 2014
Firstpage :
361
Lastpage :
364
Abstract :
Low-frequency noise (LFN) of gate stacks with Tm2O3 high-k dielectric and thulium silicate (TmSiO) interfacial layer (IL) is investigated. The measured 1/f noise is compared to SiOx/HfO2 stacks with comparable IL thickness. Integration of a high-k thulium silicate IL provides a scaled EOT of 0.3nm with good mobility and interface quality, hence excellent LFN is obtained. The LFN noise for devices with TmSiO/Tm2O3 gate dielectric is reduced for nMOSFETs and comparable for pMOSFETs compared to SiOx/HfO2 devices.
Keywords :
MOSFET; high-k dielectric thin films; thulium compounds; EOT thulium silicate interfacial layer; LFN; TmSiO-Tm2O3; gate dielectric; gate stacks; high-k dielectric; high-k thulium silicate; interface quality; low-frequency noise; nMOSFET; Dielectrics; Hafnium compounds; High K dielectric materials; Logic gates; Low-frequency noise; MOSFET; Low-frequency noise; MOSFET; Thulium silicate; high-k dielectric; interfacial layer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
ISSN :
1930-8876
Print_ISBN :
978-1-4799-4378-4
Type :
conf
DOI :
10.1109/ESSDERC.2014.6948835
Filename :
6948835
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=146137
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