Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer

Author

Olyaei, Maryam ; Malm, B. Gunnar ; Litta, Eugenio Dentoni ; Hellstrom, Per-Erik ; Ostling, Mikael

Author_Institution

Sch. of Inf. & Commun. Technol., Integrated Devices &Circuits, KTH R. Inst. of Technol., Kista, Sweden

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

361

Lastpage

364

Abstract

Low-frequency noise (LFN) of gate stacks with Tm₂O₃ high-k dielectric and thulium silicate (TmSiO) interfacial layer (IL) is investigated. The measured 1/f noise is compared to SiO_x/HfO₂ stacks with comparable IL thickness. Integration of a high-k thulium silicate IL provides a scaled EOT of 0.3nm with good mobility and interface quality, hence excellent LFN is obtained. The LFN noise for devices with TmSiO/Tm₂O₃ gate dielectric is reduced for nMOSFETs and comparable for pMOSFETs compared to SiO_x/HfO₂ devices.

Keywords

MOSFET; high-k dielectric thin films; thulium compounds; EOT thulium silicate interfacial layer; LFN; TmSiO-Tm₂O₃; gate dielectric; gate stacks; high-k dielectric; high-k thulium silicate; interface quality; low-frequency noise; nMOSFET; Dielectrics; Hafnium compounds; High K dielectric materials; Logic gates; Low-frequency noise; MOSFET; Low-frequency noise; MOSFET; Thulium silicate; high-k dielectric; interfacial layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948835

Filename

6948835