Breakdown investigation in GaN-based MIS-HEMT devices

Author

Marino, Fabio Alessio ; Bisi, Davide ; Meneghini, Matteo ; Verzellesi, G. ; Zanoni, Enrico ; Van Hove, Marleen ; You, Shi ; Decoutere, Stefaan ; Marcon, Denis ; Stoffels, Steve ; Ronchi, Nicolo ; Meneghesso, Gaudenzio

Author_Institution

Dept. of Electr. Eng., Univ. of Padova, Padua, Italy

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

377

Lastpage

380

Abstract

Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-to-band phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.

Keywords

MIS devices; aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; numerical analysis; AlGaN-GaN; MIS-HEMT devices; band-to-band phenomena; bidimensional numerical simulation; breakdown mechanisms; combined experimental data; double-heterostructure high electron mobility transistors; leakage current; physical mechanisms; Aluminum gallium nitride; Electric breakdown; Gallium nitride; HEMTs; Logic gates; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948839

Filename

6948839