DocumentCode :
1461451
Title :
New developments in silicon photovoltaic devices
Author :
Prince, M.B. ; Wolf, M.
Author_Institution :
Hoffman Electronics Corporation, Semiconductor Division, Evanston, USA
Volume :
18
Issue :
10
fYear :
1958
fDate :
10/1/1958 12:00:00 AM
Firstpage :
583
Lastpage :
594
Abstract :
The requirements which silicon photovoltaic devices have to meet in various applications are so widely different that it was necessary to develop three distinct types of devices: (1) A device which is operated in the forward biased condition, useful at moderately low to high light levels, known as a solar cell. (2) A device which is operated in the forward biased condition, useful at very low light levels, known as a low level cell. (3) A device operated in the reverse biased direction at low to high light levels, known as a photodiode. All three types are p-n junction devices, prepared by solid state diffusion methods, with each type designed to yield special characteristics. The spectral response, transient response, and temperature dependence of these devices are considered.
Keywords :
photoelectric cells; semiconductor devices;
fLanguage :
English
Journal_Title :
Radio Engineers, Journal of the British Institution of
Publisher :
iet
Type :
jour
DOI :
10.1049/jbire.1958.0062
Filename :
5259436
Link To Document :
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