• DocumentCode
    1461471
  • Title

    Magnetic ground state of a thin-film element

  • Author

    Rave, Wolfgang ; Hubert, Alex

  • Author_Institution
    Inst. fur Festkorper und Werkstofforschung, Tech. Univ. Dresden, Germany
  • Volume
    36
  • Issue
    6
  • fYear
    2000
  • fDate
    11/1/2000 12:00:00 AM
  • Firstpage
    3886
  • Lastpage
    3899
  • Abstract
    By means of three-dimensional numerical calculations we studied possible micromagnetic configurations in a rectangular Permalloy-like thin-film element. The parameters were chosen to be compatible with the so-called micromagnetic standard problem 1. We demonstrate that for these parameters a diamond domain pattern is the lowest energy state that replaces cross-tie patterns favorable in larger elements. Only at smaller sizes does the originally envisaged Landau pattern form the ground state. The transition to high-remanence structures (or what would be comparable to a “single-domain” state) is found for lateral sizes that are an order of magnitude smaller than the benchmark parameters. The transitions among the different domain patterns become plausible in view of the energy of symmetric Neel walls in extended thin films. The features of the high-remanence structures can be derived from the principle of uniform charge distribution
  • Keywords
    Permalloy; fast Fourier transforms; ferromagnetic materials; ground states; magnetic domain walls; magnetic domains; magnetic thin film devices; magnetic thin films; remanence; FFT technique; Landau pattern; diamond domain pattern; domain patterns; high-remanence structures; magnetic ground state; magnetization patterns; micromagnetic configurations; micromagnetic standard problem 1; rectangular Permalloy-like thin-film element; single-domain state; symmetric Neel walls; three-dimensional numerical calculations; uniform charge distribution; Anisotropic magnetoresistance; Energy states; Equations; Magnetic anisotropy; Magnetic films; Micromagnetics; NIST; Perpendicular magnetic anisotropy; Stationary state; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.914337
  • Filename
    914337