DocumentCode
1461471
Title
Magnetic ground state of a thin-film element
Author
Rave, Wolfgang ; Hubert, Alex
Author_Institution
Inst. fur Festkorper und Werkstofforschung, Tech. Univ. Dresden, Germany
Volume
36
Issue
6
fYear
2000
fDate
11/1/2000 12:00:00 AM
Firstpage
3886
Lastpage
3899
Abstract
By means of three-dimensional numerical calculations we studied possible micromagnetic configurations in a rectangular Permalloy-like thin-film element. The parameters were chosen to be compatible with the so-called micromagnetic standard problem 1. We demonstrate that for these parameters a diamond domain pattern is the lowest energy state that replaces cross-tie patterns favorable in larger elements. Only at smaller sizes does the originally envisaged Landau pattern form the ground state. The transition to high-remanence structures (or what would be comparable to a “single-domain” state) is found for lateral sizes that are an order of magnitude smaller than the benchmark parameters. The transitions among the different domain patterns become plausible in view of the energy of symmetric Neel walls in extended thin films. The features of the high-remanence structures can be derived from the principle of uniform charge distribution
Keywords
Permalloy; fast Fourier transforms; ferromagnetic materials; ground states; magnetic domain walls; magnetic domains; magnetic thin film devices; magnetic thin films; remanence; FFT technique; Landau pattern; diamond domain pattern; domain patterns; high-remanence structures; magnetic ground state; magnetization patterns; micromagnetic configurations; micromagnetic standard problem 1; rectangular Permalloy-like thin-film element; single-domain state; symmetric Neel walls; three-dimensional numerical calculations; uniform charge distribution; Anisotropic magnetoresistance; Energy states; Equations; Magnetic anisotropy; Magnetic films; Micromagnetics; NIST; Perpendicular magnetic anisotropy; Stationary state; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.914337
Filename
914337
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