Drain avalanche breakdown in gallium arsenide MESFET´s

Author

Wada, Yoshinori ; Tomizawa, Masaaki

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

35

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1765

Lastpage

1770

Abstract

Avalanche breakdown in GaAs MESFET´s simulated by two-dimensional (2-D) numerical calculation with a two-carrier model. The simulation involves electron-hole pair generation due to impact ionization and employs a simplified model of the surface depletion layer of GaAs. Gate-bias-dependent drain breakdown voltage is demonstrated. The effect of the surface depletion layer, drain-to-gate spacing and n⁺ layer under the drain contact upon the breakdown voltage is demonstrated. It is clarified that the surface depletion layer has a pronounced effect on the gate-bias dependence of the breakdown voltage. The breakdown mechanism is explained in terms of conductivity modulation in the semi-insulting substrate

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; impact ionisation; semiconductor device models; 2D numerical simulation; GaAs; conductivity modulation; drain avalanche breakdown; drain breakdown voltage; drain-to-gate spacing; electron-hole pair generation; gate-bias dependence; impact ionization; semi-insulting substrate; surface depletion layer; two-carrier model; Avalanche breakdown; Breakdown voltage; Conductivity; Electric breakdown; Equations; Gallium arsenide; Impact ionization; MESFETs; Numerical simulation; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7385

Filename

7385