Determination of the small-signal parameters of an AlGaAs/GaAs MODFET

Author

Eskandarian, Abdollah

Author_Institution

Martin Marietta Labs./Gamma Monolithics, Baltimore, MD, USA

Volume

35

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1793

Lastpage

1801

Abstract

The small-signal equivalent-circuit parameters of an AlGaAs/GaAs MODFET are derived by a first-order perturbation around the two-region DC model of a FET. For the first time the contribution of the AlGaAs electrons is included by using an accurate charge-control model. The charge-control model uses mixed quantum mechanical and classical approach to determine the density of channel electrons and AlGaAs neutral donors as a function of rate voltage. The model predictions show good agreement with experimental results for both low and high drain bias voltages

Keywords

III-V semiconductors; aluminium compounds; carrier density; equivalent circuits; gallium arsenide; high electron mobility transistors; semiconductor device models; AlGaAs-GaAs; MODFET; channel electron density; charge-control model; first-order perturbation; neutral donors; small-signal equivalent-circuit parameters; two-region DC model; Electrons; Equivalent circuits; Gallium arsenide; HEMTs; MODFET circuits; Microwave FETs; Microwave transistors; Poisson equations; Predictive models; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7389

Filename

7389