Title :
Determination of the small-signal parameters of an AlGaAs/GaAs MODFET
Author :
Eskandarian, Abdollah
Author_Institution :
Martin Marietta Labs./Gamma Monolithics, Baltimore, MD, USA
fDate :
11/1/1988 12:00:00 AM
Abstract :
The small-signal equivalent-circuit parameters of an AlGaAs/GaAs MODFET are derived by a first-order perturbation around the two-region DC model of a FET. For the first time the contribution of the AlGaAs electrons is included by using an accurate charge-control model. The charge-control model uses mixed quantum mechanical and classical approach to determine the density of channel electrons and AlGaAs neutral donors as a function of rate voltage. The model predictions show good agreement with experimental results for both low and high drain bias voltages
Keywords :
III-V semiconductors; aluminium compounds; carrier density; equivalent circuits; gallium arsenide; high electron mobility transistors; semiconductor device models; AlGaAs-GaAs; MODFET; channel electron density; charge-control model; first-order perturbation; neutral donors; small-signal equivalent-circuit parameters; two-region DC model; Electrons; Equivalent circuits; Gallium arsenide; HEMTs; MODFET circuits; Microwave FETs; Microwave transistors; Poisson equations; Predictive models; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
