Title :
Failure Rates for Interconnect Dielectric Breakdown: Trends Determining Technology Reliability Scaling Limits
Author :
Achanta, Ravi ; McLaughlin, Paul ; Chen, Fen
Author_Institution :
IBM Syst. & Technol. Group, Hopewell Junction, NY, USA
fDate :
6/1/2011 12:00:00 AM
Abstract :
In this paper, the dielectric properties [dielectric constant κ and thickness d (in nanometers)] that are necessary for the reliable operation of interline dielectrics used for passivation of copper interconnects in integrated circuits are determined. By relating the field acceleration factor to the dielectric constant, the optimum dielectric properties needed for meeting industrial reliability targets are estimated. This fundamental analysis offers a method of rationally introducing new materials to meet technology performance goals while maintaining reliability targets.
Keywords :
copper; electric breakdown; integrated circuit interconnections; integrated circuit reliability; permittivity; copper interconnects; dielectric constant; dielectric thickness; failure rates; interconnect dielectric breakdown; reliability scaling limits; Acceleration; Dielectric constant; Electric breakdown; Integrated circuit reliability; Materials; Copper interconnects; interline dielectric (ILD) breakdown; material reliability; technology scaling;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2011.2121067