DocumentCode
1461535
Title
Magneto-optical garnet films made by reactive sputtering
Author
Stadler, Bethanie J.H. ; Gopinath, Anand
Author_Institution
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume
36
Issue
6
fYear
2000
fDate
11/1/2000 12:00:00 AM
Firstpage
3957
Lastpage
3961
Abstract
Reactive radio frequency (RF) sputtering was used to grow cerium-doped yttrium iron garnet (YIG) films on magnesium oxide substrates. Magnesium oxide has been proven to be a good buffer material for semiconducting substrates. Reactive sputtering was not effective for cerium doping because the cerium target reacted with the oxygen in the sputtering gas. The films were amorphous as deposited. Stoichiometric compositions yielded smooth, polycrystalline garnet films on annealing. The effects of fluctuations in the yttrium-to-iron ratio were studied. Separate iron and yttrium targets were cosputtered in order to tailor the composition systematically along the iron-yttrium binary phase diagram. Oxygen content was found to be important in the formation of garnet and in the prevention of secondary phases. The garnet films had strong in-plane magnetizations and small coercive fields, which have promise for waveguide and switch devices, respectively
Keywords
annealing; cerium; coercive force; garnets; magnetic hysteresis; magnetic thin films; magneto-optical devices; sputter deposition; sputtered coatings; yttrium compounds; MgO; MgO substrates; O content; Y-Fe ratio fluctuations; YFe5O12:Ce; YIG:Ce; YIG:Ce magneto-optical films; amorphous films; annealing; garnet films; in-plane magnetization; magneto-optical Faraday rotators; reactive RF sputtering; reactive sputtering; secondary phase prevention; small coercive field; smooth polycrystalline garnet films; stoichiometric compositions; switch devices; waveguide devices; Cerium; Garnet films; Iron; Magnesium oxide; Radio frequency; Semiconductor films; Sputtering; Substrates; Switches; Yttrium;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.914347
Filename
914347
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