Temperature dependence of threshold voltage fluctuations in CMOS transistors incorporating halo implant

Author

Edwards, Hal ; Niu Jin ; Fan-Chi Hou ; Choi, Li Jen ; Krakowski, Tracey ; Joardar, Kuntal

Author_Institution

Texas Instrum., Inc., Dallas, TX, USA

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

413

Lastpage

416

Abstract

We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. A bias method is presented and shown to recover part of the matching degradation due to the halo implant.

Keywords

CMOS analogue integrated circuits; integrated circuit modelling; ion implantation; semiconductor doping; CMOS VT mismatch; CMOS transistors; bias method; compact model; device physics theory; halo implant; temperature dependence; threshold voltage fluctuations; threshold voltage mismatch; CMOS integrated circuits; Doping; Implants; Mathematical model; Semiconductor device modeling; Threshold voltage; Transistors; CMOS analog integrated circuits; Differential amplifiers; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948848

Filename

6948848

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=146160