Performance Evaluation of 3.3-kV Planar CIGBT in the NPT Technology With RTA Anode

In this paper, we report the experimental results of a 3.3-kV-rated clustered insulated gate bipolar transistor (CIGBT) with planar gates in nonpunchthrough technology (NPT) and rapid thermal annealing (RTA) anode. Previously, it had been shown that, for identical turn-off losses, the on -state voltage of the 3.3-kV CIGBT is more than 0.7 V lower than that of an equivalent IGBT. Herein, we show that, due to the low saturation current density, the CIGBT has a rugged short-circuit performance of more than 10 μs even at 125 ^°C. Furthermore, results also show that the use of the RTA anode, as compared with, the diffused anode helps in reducing the turn-off losses by about 50% without affecting the V_ce(sat) value of the device.