Title :
Low-Power Gate Driver Circuit for TFT-LCD Application
Author :
Lin, Chih-Lung ; Tu, Chun-Da ; Wu, Chia-En ; Hung, Chia-Che ; Gan, Kwang-Jow ; Chou, Kuan-Wen
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
5/1/2012 12:00:00 AM
Abstract :
This paper presents a novel low-power gate driver circuit fabricated from glass by using hydrogenated amorphous silicon (a-Si:H) technology and a standard five-mask process. The tolerance of the threshold voltage shift of the proposed gate driver circuit can be estimated as 30 V by using an H-SPICE simulator. Measurement results indicate that the rising and falling times of the output waveform are equal to those in the initial state. Moreover, the proposed gate driver circuit can operate reliably at a high temperature (T = 120 °C) for over 360 h. Furthermore, the proposed gate driver circuit reduces power consumption by 77.3% over that of a conventional gate driver circuit.
Keywords :
driver circuits; elemental semiconductors; liquid crystal displays; low-power electronics; masks; silicon; thin film transistors; H-SPICE simulator; Si:H; TFT-LCD application; hydrogenated amorphous silicon technology; low-power gate driver circuit; power consumption; standard five-mask process; temperature 120 degC; threshold voltage shift; time 360 h; Amorphous silicon; Clocks; Driver circuits; Logic gates; Power demand; Stress; Threshold voltage; Gate driver circuit; power consumption; threshold voltage shift $(Delta V_{rm TH})$;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2186966
