CMOS Fully Compatible Embedded Non-Volatile Memory System With $\hbox {TiO}_{2}\hbox {-SiO}_{2}$ Hybrid Resistive-Switching Material

We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, TiO₂-SiO₂, in a 0.18 μm node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the TiO₂ based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inserting a very thin SiO₂ layer between the bottom electrode and TiO₂ film to enhance the Schottky barrier height, while maintaining TiO₂ based RRAM characteristics.