DocumentCode
1461781
Title
Detection of Thermal Neutrons With a CMOS Pixel Sensor for a Future Dosemeter
Author
Vanstalle, Marie ; Husson, Daniel ; Higueret, Stéphane ; Lê, Thê-Duc ; Nourreddine, Abdel-Mjid
Author_Institution
Institut Pluridisciplinaire Hubert Curien, University of Strasbourg, CNRS, UMR7178, IN2P3, Strasbourg, France
Volume
59
Issue
4
fYear
2012
Firstpage
1443
Lastpage
1447
Abstract
The RaMsEs group (Radioprotection et Mesures Environnementales) is developing a new compact device for operational neutron dosimetry. The electronic part of the detector is made of an integrated active pixel sensor, originally designed for tracking in particle physics. This device has useful features for neutrons, such as high detection efficiency for charged particles, good radiation resistance, high readout speed, low power consumption and high rejection of photon background. A good response of the device to fast neutrons has already been demonstrated . In order to test the sensibility of the detector to thermal neutrons, experiments have been carried out with a 512
512 pixel CMOS sensor on a californium source moderated with heavy water
on the Van Gogh irradiator at the LMDN (Laboratoire de Mtrologie des Neutrons), IRSN, Cadarache, France. A thin boron converter is used to benefit from the significant cross section of the
reaction. Results show a high detection efficiency (around
) of the device to thermal neutrons. Our measurements are in good agreement with GEANT4 Monte Carlo simulations.
Keywords
Boron; CMOS integrated circuits; Neutrons; Noise; Protons; Silicon; Thermal sensors; Active pixel sensor; CMOS; GEANT4; Neutron; dosimetry;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2012.2185511
Filename
6163399
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